2N1711S

2N1711S

SKU: 2N1711S
2N1711S Transistor Silicon NPN CASE: TO39 MAKE: Motorola Semiconductor
Datasheet
2N1711S Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO39
Manufacturer Motorola Semiconductor
Vbr CBO 75
Vbr CEO 50
Max. PD (W) 800m
C(ob) (F) 25p
Derate (Amb) (W/°C) 4.5m
hfe 50
Ic Max. (A) 1.0
Icbo Max. @Vcb Max. (A) 10n
Polarity NPN
Trans. Freq (Hz) Min. 70M
@VCE (test) (V) 5.0
Oper. Temp (°C) Max. 175
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.8 W
Maximum Collector-Base Voltage |Vcb| 75 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 25 pF
Transition Frequency (ft): 70 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 553923
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