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2N1722
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2N1722

SKU: 2N1722
2N1722 Transistor Silicon NPN CASE: TO53 MAKE: Generic
Datasheet
2N1722 Datasheet
Product specifications
Equivalent 2N1722A
Type Transistor Silicon NPN
Case TO53
Manufacturer Microsemi
Vbr CBO 120
Vbr CEO 80
Max. PD (W) 3.0
Max. hFE 90
Min hFE 20
Ic Max. (A) 5.0
@Ic (test) (A) 2.0
Icbo Max. @Vcb Max. (A) 500u
Polarity NPN
R(sat) (Û) 300m
Derate Above 25°C 666m
Trans. Freq (Hz) Min. 10M
Oper. Temp (°C) Max. 175
@VCE (V) 15
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 100 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 7.5 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 550 pF
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 605894
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