2N1730

SKU: 2N1730

2N1730 Transistor Germanium NPN CASE: TO5 MAKE: USA Make

Product specifications

Weight	0.01 kg
Type	Transistor Germanium NPN
Case	TO5
Manufacturer	USA Make
Vbr CBO	25
Vbr CEO	15
Max. PD (W)	150m
C(ob) (F)	20p
Derate (Amb) (W/°C)	2.5m
hfe	30
Ic Max. (A)	300m
Icbo Max. @Vcb Max. (A)	6.0u
Polarity	NPN
@VCE (test) (V)	.30
Oper. Temp (°C) Max.	100
@Ic (A)	100m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.15 W
Maximum Collector-Base Voltage \|Vcb\|	20 V
Maximum Collector-Emitter Voltage \|Vce\|	15 V
Maximum Collector Current \|Ic max\|	0.3 A
Max. Operating Junction Temperature (Tj)	75 °C
Collector Capacitance (Cc)	20 pF
Transition Frequency (ft):	5 MHz
Forward Current Transfer Ratio (hFE), MIN	30
SKU	776700

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