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2N175
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2N175

SKU: 2N175
2N175 Transistor Germanium PNP CASE: TO40 MAKE: USA Make
Product specifications
Type Transistor Germanium PNP
Case TO40
Manufacturer USA Make
Vbr CBO 10
Max. PD (W) 20m
Derate (Amb) (W/°C) 3.3m
hfe 75
Ic Max. (A) 2.0m
Icbo Max. @Vcb Max. (A) 12u
Polarity PNP
Trans. Freq (Hz) Min. 850k
@VCE (test) (V) 5.0
Oper. Temp (°C) Max. 50
@Ic (A) 1.5m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.02 W
Maximum Collector-Base Voltage |Vcb| 10 V
Maximum Collector-Emitter Voltage |Vce| 10 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.002 A
Max. Operating Junction Temperature (Tj) 85 °C
Collector Capacitance (Cc) 36 pF
Transition Frequency (ft): 0.3 MHz
Forward Current Transfer Ratio (hFE), MIN 65
SKU 605897
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