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2N1757
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2N1757

SKU: 2N1757
2N1757 Transistor Germanium PNP CASE: MS7 MAKE: Generic
Product specifications
Type Transistor Germanium PNP
Case MS7
Manufacturer Generic
Vbr CBO 80
Vbr CEO 65
Max. PD (W) 28
Max. hFE 75
Min hFE 30
Ic Max. (A) 3.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 3.0m
Polarity PNP
Tr Max. (s) 4.0u
R(sat) (Û) 230m
Derate Above 25°C 400m
Trans. Freq (Hz) Min. 15k
Oper. Temp (°C) Max. 100
@VCE (V) 2.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 28 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 65 V
Maximum Emitter-Base Voltage |Veb| 30 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 95 °C
Transition Frequency (ft): 0.15 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 605899
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