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2N1759
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2N1759

SKU: 2N1759
2N1759 Transistor Germanium PNP CASE: MS7 MAKE: Generic
Product specifications
Type Transistor Germanium PNP
Case MS7
Manufacturer Generic
Vbr CBO 40
Vbr CEO 35
Max. PD (W) 28
Max. hFE 150
Min hFE 60
Ic Max. (A) 3.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 3.0m
Polarity PNP
Tr Max. (s) 3.5u
R(sat) (Û) 160m
Derate Above 25°C 400m
Trans. Freq (Hz) Min. 15k
Oper. Temp (°C) Max. 100
@VCE (V) 2.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 28 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 35 V
Maximum Emitter-Base Voltage |Veb| 30 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 95 °C
Transition Frequency (ft): 0.15 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 368126
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