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2N1768
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2N1768

SKU: 2N1768
2N1768 Transistor Silicon NPN CASE: TO57 MAKE: USA Make
Product specifications
Type Transistor Silicon NPN
Case TO57
Manufacturer USA Make
Vbr CBO 60
Vbr CEO 40
Max. PD (W) 40
Max. hFE 100
Min hFE 35
Ic Max. (A) 3.0
@Ic (test) (A) 750m
Icbo Max. @Vcb Max. (A) 15u
Polarity NPN
R(sat) (Û) 1.0
Derate Above 25°C 228m
Trans. Freq (Hz) Min. 600k
Oper. Temp (°C) Max. 175
@VCE (V) 4.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 12 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 175 pF
Transition Frequency (ft): 0.6 MHz
Forward Current Transfer Ratio (hFE), MIN 35
SKU 776690
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