2N1769

SKU: 2N1769

2N1769 Transistor Silicon NPN CASE: TO57 MAKE: USA Make

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO57
Manufacturer	USA Make
Vbr CBO	100
Vbr CEO	55
Max. PD (W)	40
Max. hFE	100
Min hFE	35
Ic Max. (A)	3.0
@Ic (test) (A)	750m
Icbo Max. @Vcb Max. (A)	15u
Polarity	NPN
R(sat) (Û)	1.0
Derate Above 25°C	228m
Trans. Freq (Hz) Min.	600k
Oper. Temp (°C) Max.	175
@VCE (V)	4.0
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	40 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Collector-Emitter Voltage \|Vce\|	55 V
Maximum Emitter-Base Voltage \|Veb\|	12 V
Maximum Collector Current \|Ic max\|	3 A
Max. Operating Junction Temperature (Tj)	200 °C
Collector Capacitance (Cc)	175 pF
Transition Frequency (ft):	0.6 MHz
Forward Current Transfer Ratio (hFE), MIN	35
SKU	776689

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