2N1789

SKU: 2N1789

2N1789 Transistor Germanium PNP CASE: TO9 MAKE: USA Make

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO5
Manufacturer	USA Make
Vbr CBO	35
Vbr CEO	35
Max. PD (W)	60m
C(ob) (F)	2.5p
Derate (Amb) (W/°C)	1.3m
hfe	20
Ic Max. (A)	50m
Icbo Max. @Vcb Max. (A)	7.0u
Polarity	PNP
@VCE (test) (V)	12
Oper. Temp (°C) Max.	100
@Ic (A)	1.0m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.06 W
Maximum Collector-Base Voltage \|Vcb\|	35 V
Maximum Collector Current \|Ic max\|	0.05 A
Max. Operating Junction Temperature (Tj)	100 °C
Collector Capacitance (Cc)	2.5 pF
Transition Frequency (ft):	20 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	776671

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