2N1890S

SKU: 2N1890S

2N1890S Transistor Silicon NPN CASE: TO39 MAKE: Motorola Semiconductor

Datasheet

2N1890S Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO39
Manufacturer	Motorola Semiconductor
Vbr CBO	100
Vbr CEO	60
Max. PD (W)	800m
Derate (Amb) (W/°C)	4.5m
hfe	3.5
Ic Max. (A)	500m
Polarity	NPN
@VCE (test) (V)	10
Oper. Temp (°C) Max.	200
@Ic (A)	50m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.8 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	0.6 A
Max. Operating Junction Temperature (Tj)	85 °C
Collector Capacitance (Cc)	20 pF
Transition Frequency (ft):	50 MHz
Forward Current Transfer Ratio (hFE), MIN	100
SKU	553924

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