The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N1893S

2N1893S

SKU: 2N1893S
2N1893S Transistor Silicon NPN CASE: TO39 MAKE: Motorola Semiconductor
Datasheet
2N1893S Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO39
Manufacturer Motorola Semiconductor
Vbr CBO 120
Vbr CEO 80
Max. PD (W) 800m
Derate (Amb) (W/°C) 4.5m
hfe 3.0
Ic Max. (A) 500m
Polarity NPN
@VCE (test) (V) 10
Oper. Temp (°C) Max. 200
@Ic (A) 50m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.8 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 15 pF
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 553925
Back