| Type | Transistor Silicon NPN | |
| Case | TO61 | |
| Manufacturer | Raytheon Semiconductor | |
| Vbr CBO | 60 | |
| Vbr CEO | 60 | |
| Max. PD (W) | 85 | |
| Max. hFE | 60 | |
| Min hFE | 12 | |
| Ic Max. (A) | 2.0 | |
| @Ic (test) (A) | 1.0 | |
| Polarity | NPN | |
| R(sat) (Û) | 5.0 | |
| Derate Above 25°C | 485m | |
| Trans. Freq (Hz) Min. | 25M | |
| Oper. Temp (°C) Max. | 175 | |
| @VCE (V) | 15 | |
| Pinout Equivalence Number | N/A | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 85 W | |
| Maximum Collector-Base Voltage |Vcb| | 60 V | |
| Maximum Collector Current |Ic max| | 2 A | |
| Max. Operating Junction Temperature (Tj) | 200 °C | |
| Transition Frequency (ft): | 25 MHz | |
| Forward Current Transfer Ratio (hFE), MIN | 12 | |
| SKU | 776547 | |