2N1897
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2N1897

SKU: 2N1897
2N1897 Transistor Silicon NPN CASE: TO61 MAKE: Raytheon Semiconductor
Product specifications
Type Transistor Silicon NPN
Case TO61
Manufacturer Raytheon Semiconductor
Vbr CBO 80
Vbr CEO 80
Max. PD (W) 85
t(f) Max. (S) 1.4u-
Max. hFE 135
Min hFE 45
Ic Max. (A) 2.0
@Ic (test) (A) 1.0
Polarity NPN
Tr Max. (s) 110n-
R(sat) (Û) 4.0
Derate Above 25°C 485m
Trans. Freq (Hz) Min. 25M
Oper. Temp (°C) Max. 175
@VCE (V) 15
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 85 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 25 MHz
Forward Current Transfer Ratio (hFE), MIN 45
SKU 776545
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