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2N1918
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2N1918

SKU: 2N1918
2N1918 Transistor Silicon PNP CASE: TO5 MAKE: USA Make
Product specifications
Type Transistor Silicon PNP
Case TO5
Manufacturer USA Make
Vbr CBO 25
Vbr CEO 8.0
Max. PD (W) 250m
C(ob) (F) 7.0p
Derate (Amb) (W/°C) 1.7m
hfe 50
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 2.5n
Polarity PNP
Trans. Freq (Hz) Min. 10.M
@VCE (test) (V) 6.0i
Oper. Temp (°C) Max. 175
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 25 V
Maximum Collector-Emitter Voltage |Vce| 8 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 14 pF
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 25
SKU 776526
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