2N1936

SKU: 2N1936

2N1936 Transistor Silicon NPN CASE: TO63 MAKE: Generic

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO63
Manufacturer	Generic
Vbr CBO	125
Vbr CEO	60
Max. PD (W)	150
Max. hFE	50
Min hFE	10
Ic Max. (A)	20
@Ic (test) (A)	10
Icbo Max. @Vcb Max. (A)	10m
Polarity	NPN
R(sat) (Û)	75m
Derate Above 25°C	2.0
Trans. Freq (Hz) Min.	4.0M
Oper. Temp (°C) Max.	175
@VCE (V)	10
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	200 W
Maximum Collector-Base Voltage \|Vcb\|	125 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	20 A
Max. Operating Junction Temperature (Tj)	200 °C
Collector Capacitance (Cc)	1800 pF
Transition Frequency (ft):	4 MHz
Forward Current Transfer Ratio (hFE), MIN	10
SKU	776512

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