2N1955
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2N1955

SKU: 2N1955
2N1955 Transistor Germanium PNP CASE: TO5 MAKE: USA Make
Product specifications
Type Transistor Germanium PNP
Case TO5
Manufacturer USA Make
Vbr CBO 60
Vbr CEO 18
Max. PD (W) 200m
Derate (Amb) (W/°C) 2.8m
hfe 50
Ic Max. (A) 200m
Icbo Max. @Vcb Max. (A) 20u
Polarity PNP
@VCE (test) (V) .50
Oper. Temp (°C) Max. 100
@Ic (A) 20m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 18 V
Maximum Collector Current |Ic max| 0.2 A
Max. Operating Junction Temperature (Tj) 100 °C
Forward Current Transfer Ratio (hFE), MIN 50
SKU 776498
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