The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N1958
View detailed images (12)

2N1958

SKU: 2N1958
2N1958 Transistor Silicon NPN CASE: TO5 MAKE: USA Make
Product specifications
Type Transistor Silicon NPN
Case TO5
Manufacturer USA Make
Vbr CBO 60
Vbr CEO 40
Max. PD (W) 600m
C(ob) (F) 18p
Derate (Amb) (W/°C) 4.0m
hfe 20
Ic Max. (A) 500m
Icbo Max. @Vcb Max. (A) .50u
Polarity NPN
Trans. Freq (Hz) Min. 100M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 175
@Ic (A) 150m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.6 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 18 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 776496
Back