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2N1961
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2N1961

SKU: 2N1961
2N1961 Transistor Germanium PNP CASE: TO5 MAKE: SYL
Product specifications
Type Transistor Germanium PNP
Case TO5
Manufacturer SYL
Vbr CBO 12
Vbr CEO 12
Max. PD (W) 150m
Derate (Amb) (W/°C) 2.0m
hfe 20
Ic Max. (A) 200m
Icbo Max. @Vcb Max. (A) 3.0u
Polarity PNP
@VCE (test) (V) .25
Oper. Temp (°C) Max. 100
@Ic (A) 10m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 12 V
Maximum Collector-Emitter Voltage |Vce| 12 V
Maximum Collector Current |Ic max| 0.2 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 776490
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