2N1971

SKU: 2N1971

2N1971 Transistor Germanium PNP CASE: TO3 MAKE: USA Make

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO3
Manufacturer	USA Make
Vbr CBO	80
Vbr CEO	40
Max. PD (W)	38
Max. hFE	60
Min hFE	25
Ic Max. (A)	4.0
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	20m
Polarity	PNP
R(sat) (Û)	300m
Derate Above 25°C	500m
Trans. Freq (Hz) Min.	5.0k
Oper. Temp (°C) Max.	100
@VCE (V)	2.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	38 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Collector-Emitter Voltage \|Vce\|	40 V
Maximum Emitter-Base Voltage \|Veb\|	40 V
Maximum Collector Current \|Ic max\|	4 A
Max. Operating Junction Temperature (Tj)	100 °C
Transition Frequency (ft):	0.17 MHz
Forward Current Transfer Ratio (hFE), MIN	25
SKU	776485

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