2N1982
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2N1982

SKU: 2N1982
2N1982 Transistor Germanium PNP CASE: TO36 MAKE: Generic
Product specifications
Type Transistor Germanium PNP
Case TO36
Manufacturer Generic
Vbr CBO 90
Vbr CEO 50
Max. PD (W) 150
Max. hFE 100
Min hFE 50
Ic Max. (A) 15
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 6.0m
Polarity PNP
R(sat) (Û) 100m
Derate Above 25°C 2.0
Trans. Freq (Hz) Min. 3.0k
Oper. Temp (°C) Max. 100
@VCE (V) 2.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 170 W
Maximum Collector-Base Voltage |Vcb| 90 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 20 V
Maximum Collector Current |Ic max| 15 A
Max. Operating Junction Temperature (Tj) 110 °C
Transition Frequency (ft): 0.03 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SKU 776481
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