The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N1983
View detailed images (1)

2N1983

SKU: 2N1983
2N1983 Transistor Silicon NPN CASE: TO105 MAKE: Motorola Semiconductor
Price:
£4.79 Inc. VAT (£3.99 Ex. VAT)
£4.79 Inc. VAT (£3.99 Ex. VAT)
Qty
  • 2 pieces in 1-2 Days
  • More pieces shipped in 14 days
?
Datasheet
2N1983 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO105
Manufacturer Motorola Semiconductor
Vbr CBO 50
Vbr CEO 25
Max. PD (W) 600m
C(ob) (F) 45p
Derate (Amb) (W/°C) 4.7m
hfe 70
Ic Max. (A) 1.0
Icbo Max. @Vcb Max. (A) 5.0u
Polarity NPN
Trans. Freq (Hz) Min. 40M
@VCE (test) (V) 5.0
Oper. Temp (°C) Max. 150
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.6 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 45 pF
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN 75
SKU 312741
Back