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2N1989
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2N1989

SKU: 2N1989
2N1989 Transistor Silicon NPN CASE: TO5 MAKE: Generic
Datasheet
2N1989 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO5
Manufacturer New Jersey Semiconductor
Vbr CBO 100
Vbr CEO 45
Max. PD (W) 600m
C(ob) (F) 20p
Derate (Amb) (W/°C) 4.7m
hfe 10
Ic Max. (A) 1.0
Icbo Max. @Vcb Max. (A) 5.0u
Polarity NPN
Trans. Freq (Hz) Min. 40M
@VCE (test) (V) 5.0
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.6 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 45 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 20 pF
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 776480
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