2N1990W
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2N1990W

SKU: 2N1990W
2N1990W Transistor Silicon NPN CASE: TO106 MAKE: SGS Thomson
Product specifications
Type Transistor Silicon NPN
Case TO106
Manufacturer SGS Thomson
Vbr CBO 100
Vbr CEO 75
Max. PD (W) 300m
Derate (Amb) (W/°C) 3.0m
hfe 25
Icbo Max. @Vcb Max. (A) 1.0u
Polarity NPN
@VCE (test) (V) .50
Oper. Temp (°C) Max. 125
@Ic (A) 2.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.6 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.2 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 20 pF
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN 25
SKU 575568
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