2N2000

2N2000

SKU: 2N2000
2N2000 Transistor Germanium PNP CASE: TO5 MAKE: Generic
Product specifications
Type Transistor Germanium PNP
Case TO5
Manufacturer Generic
Vbr CBO 50
Vbr CEO 15
Max. PD (W) 300m
C(ob) (F) 35p
Derate (Amb) (W/°C) 4.0m
hfe 50
Ic Max. (A) 1.0
Icbo Max. @Vcb Max. (A) 10u
Polarity PNP
Trans. Freq (Hz) Min. 2.0M
@VCE (test) (V) .30
Oper. Temp (°C) Max. 100
@Ic (A) 100m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 20 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 100 °C
Collector Capacitance (Cc) 35 pF
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SKU 776474
Back