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2N2007
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2N2007

SKU: 2N2007
2N2007 SemiConductor - Case: TO5 Make: USA Make
+ VAT 20% for UK purchases
Product specifications
Type Transistor Silicon PNP
Manufacturer USA Make
Case TO5
Vbr CBO 60
Vbr CEO 35
Max. PD (W) 250m
C(ob) (F) 10p
Derate (Amb) (W/°C) 1.6m
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 5.0n
Polarity PNP
Trans. Freq (Hz) Min. 800k
@VCE (test) (V) 6.0i
Oper. Temp (°C) Max. 175
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 35 V
Maximum Emitter-Base Voltage |Veb| 60 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 10 pF
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN 12
SKU 776468
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