2N2008

2N2008

SKU: 2N2008
2N2008 Transistor Silicon NPN CASE: TO5 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO5
Manufacturer Generic
Vbr CBO 175
Vbr CEO 110
Max. PD (W) 800m
C(ob) (F) 15p
Derate (Amb) (W/°C) 4.5m
hfe 20
Ic Max. (A) 500m
Icbo Max. @Vcb Max. (A) 50n
Polarity NPN
Trans. Freq (Hz) Min. 40M
@VCE (test) (V) 5.0i
Oper. Temp (°C) Max. 175
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.8 W
Maximum Collector-Base Voltage |Vcb| 175 V
Maximum Collector-Emitter Voltage |Vce| 110 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 0.3 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 15 pF
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 776467
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