2N2016
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2N2016

SKU: 2N2016
2N2016 Transistor Silicon NPN CASE: TO36 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO36
Manufacturer Generic
Vbr CBO 130
Vbr CEO 65
Max. PD (W) 150
Max. hFE 50
Min hFE 15
Ic Max. (A) 10
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 2.0m
Polarity NPN
R(sat) (Û) 250m
Derate Above 25°C 855m
Trans. Freq (Hz) Min. 12k
Oper. Temp (°C) Max. 175#
@VCE (V) 4.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 150 W
Maximum Collector-Base Voltage |Vcb| 130 V
Maximum Collector-Emitter Voltage |Vce| 65 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN 15
SKU 368142
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