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2N2019
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2N2019

SKU: 2N2019
2N2019 Transistor Silicon NPN CASE: MT11 MAKE: USA Make
Product specifications
Type Transistor Silicon NPN
Case MT11
Manufacturer USA Make
Vbr CBO 200
Vbr CEO 140
Max. PD (W) 20
Max. hFE 60
Min hFE 20
Ic Max. (A) 2.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
Tr Max. (s) 1.0u
R(sat) (Û) 6.0
Derate Above 25°C 263m
Trans. Freq (Hz) Min. 10M
Oper. Temp (°C) Max. 175
@VCE (V) 10
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 200 V
Maximum Collector-Emitter Voltage |Vce| 140 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 394119
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