2N2060L

SKU: 2N2060L

2N2060L Transistor Silicon NPN CASE: TO78 MAKE: Raytheon

Datasheet

2N2060L Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO78
Manufacturer	Raytheon
Vbr CBO	100
Vbr CEO	60
Max. PD (W)	500m
Derate (Amb) (W/°C)	3.0m
hfe	3
Ic Max. (A)	500m
Polarity	NPN
@VCE (test) (V)	10
Oper. Temp (°C) Max.	200
@Ic (A)	50m
Pinout Equivalence Number	7-16
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	2.12 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	0.5 A
Max. Operating Junction Temperature (Tj)	200 °C
Collector Capacitance (Cc)	15 pF
Forward Current Transfer Ratio (hFE), MIN	25
SKU	776411

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