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2N2067
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2N2067

SKU: 2N2067
2N2067 Transistor Germanium PNP CASE: MM17 MAKE: USA Make
Product specifications
Type Transistor Germanium PNP
Case MM17
Manufacturer USA Make
Vbr CBO 40
Vbr CEO 25
Max. PD (W) 10
Max. hFE 100
Min hFE 20
Ic Max. (A) 3.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 3.0m
Polarity PNP
R(sat) (Û) 700m
Derate Above 25°C 400m
Trans. Freq (Hz) Min. 7.0k
Oper. Temp (°C) Max. 100
@VCE (V) 14
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 20 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 90 °C
Transition Frequency (ft): 0.07 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 776399
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