2N2067B

SKU: 2N2067B

2N2067B Transistor Germanium PNP CASE: MM17 MAKE: USA Make

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	MM17
Manufacturer	USA Make
Vbr CBO	40
Vbr CEO	35
Max. PD (W)	10
Min hFE	15
Ic Max. (A)	3.0
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	3.0m
Polarity	PNP
R(sat) (Û)	500m
Derate Above 25°C	400m
Trans. Freq (Hz) Min.	7.0k
Oper. Temp (°C) Max.	100
@VCE (V)	14
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	10 W
Maximum Collector-Base Voltage \|Vcb\|	40 V
Maximum Collector-Emitter Voltage \|Vce\|	25 V
Maximum Emitter-Base Voltage \|Veb\|	20 V
Maximum Collector Current \|Ic max\|	3 A
Max. Operating Junction Temperature (Tj)	90 °C
Transition Frequency (ft):	0.07 MHz
Forward Current Transfer Ratio (hFE), MIN	15
SKU	776398

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