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2N2067O
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2N2067O

SKU: 2N2067O
2N2067O Transistor Germanium PNP CASE: MM17 MAKE: USA Make
Product specifications
Type Transistor Germanium PNP
Case MM17
Manufacturer USA Make
Vbr CBO 40
Vbr CEO 35
Max. PD (W) 10
Min hFE 20
Ic Max. (A) 3.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 3.0m
Polarity PNP
R(sat) (Û) 500m
Derate Above 25°C 400m
Trans. Freq (Hz) Min. 7.0k
Oper. Temp (°C) Max. 100
@VCE (V) 14
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 20 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 90 °C
Transition Frequency (ft): 0.07 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 776397
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