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2N2101
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2N2101

SKU: 2N2101
2N2101 Transistor Silicon NPN CASE: TO61 MAKE: USA Make
Product specifications
Type Transistor Silicon NPN
Case TO61
Manufacturer USA Make
Vbr CBO 60
Vbr CEO 40
Max. PD (W) 75
Max. hFE 60
Min hFE 15
Ic Max. (A) 3.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 30u
Polarity NPN
R(sat) (Û) 5.0
Derate Above 25°C 450m
Oper. Temp (°C) Max. 175
@VCE (V) 15
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 75 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 0.025 MHz
Forward Current Transfer Ratio (hFE), MIN 15
SKU 394126
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