2N2126

2N2126

SKU: 2N2126
2N2126 Transistor Silicon NPN CASE: TO83 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO83
Manufacturer Generic
Vbr CBO 200
Vbr CEO 200
Max. PD (W) 250
t(f) Max. (S) 25u+
Min hFE 10
Ic Max. (A) 20
@Ic (test) (A) 20
Icbo Max. @Vcb Max. (A) 25m
Polarity NPN
Tr Max. (s) 20u
R(sat) (Û) 75m
Derate Above 25°C 2.1
Oper. Temp (°C) Max. 175
@VCE (V) 4.0
Pinout Equivalence Number 3-17
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 250 W
Maximum Collector-Base Voltage |Vcb| 200 V
Maximum Collector-Emitter Voltage |Vce| 200 V
Maximum Emitter-Base Voltage |Veb| 15 V
Maximum Collector Current |Ic max| 30 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 776347
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