2N215

SKU: 2N215

2N215 Transistor Germanium PNP CASE: TO1 MAKE: USA Make

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO1
Manufacturer	USA Make
Vbr CBO	30
Max. PD (W)	150m
Derate (Amb) (W/°C)	2.5m
Ic Max. (A)	50m
Icbo Max. @Vcb Max. (A)	20u
Polarity	PNP
Trans. Freq (Hz) Min.	700k
Oper. Temp (°C) Max.	70
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.18 W
Maximum Collector-Base Voltage \|Vcb\|	30 V
Maximum Collector-Emitter Voltage \|Vce\|	25 V
Maximum Emitter-Base Voltage \|Veb\|	12 V
Maximum Collector Current \|Ic max\|	0.05 A
Max. Operating Junction Temperature (Tj)	85 °C
Collector Capacitance (Cc)	80 pF
Transition Frequency (ft):	0.3 MHz
Forward Current Transfer Ratio (hFE), MIN	45
SKU	776314

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