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2N2150
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2N2150

SKU: 2N2150
2N2150 Transistor Silicon NPN CASE: MT38-1 MAKE: Generic
Datasheet
2N2150 Datasheet
Product specifications
Type Transistor Silicon NPN
Case MT38-1
Manufacturer Microsemi
Vbr CBO 125
Vbr CEO 80
Max. PD (W) 30
Max. hFE 60
Min hFE 20
Ic Max. (A) 2.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 5.0u
Polarity NPN
Derate Above 25°C 400m
Trans. Freq (Hz) Min. 10M
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 125 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 776313
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