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2N2169
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2N2169

SKU: 2N2169
2N2169 Transistor Germanium PNP CASE: TO9 MAKE: USA Make
Product specifications
Type Transistor Germanium PNP
Case TO5
Manufacturer USA Make
Vbr CBO 15
Vbr CEO 15
Max. PD (W) 60m
C(ob) (F) 2.5p
Derate (Amb) (W/°C) 800u
hfe 30
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 3.0u
Polarity PNP
@VCE (test) (V) .50
Oper. Temp (°C) Max. 100
@Ic (A) 50m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.06 W
Maximum Collector-Base Voltage |Vcb| 15 V
Maximum Collector-Emitter Voltage |Vce| 15 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 100 °C
Collector Capacitance (Cc) 2.5 pF
Transition Frequency (ft): 450 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 776293
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