2N217

SKU: 2N217

2N217 Transistor Germanium PNP CASE: TO1 MAKE: USA Make

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO1
Manufacturer	USA Make
Vbr CBO	35
Vbr CEO	25
Max. PD (W)	165m
C(ob) (F)	60p
Derate (Amb) (W/°C)	2.7m
hfe	50
Ic Max. (A)	150m
Icbo Max. @Vcb Max. (A)	7.0u
Polarity	PNP
@VCE (test) (V)	6.0
Oper. Temp (°C) Max.	85
@Ic (A)	1.0m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.15 W
Maximum Collector-Base Voltage \|Vcb\|	25 V
Maximum Collector-Emitter Voltage \|Vce\|	25 V
Maximum Emitter-Base Voltage \|Veb\|	12 V
Maximum Collector Current \|Ic max\|	0.07 A
Max. Operating Junction Temperature (Tj)	50 °C
Collector Capacitance (Cc)	20 pF
Transition Frequency (ft):	1 MHz
Forward Current Transfer Ratio (hFE), MIN	75
SKU	368158

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