2N2170

SKU: 2N2170

2N2170 Transistor Germanium PNP CASE: TO9 MAKE: USA Make

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO5
Manufacturer	USA Make
Vbr CBO	15
Vbr CEO	10
Max. PD (W)	60m
C(ob) (F)	3.0p
Derate (Amb) (W/°C)	800u
hfe	20
Ic Max. (A)	100m
Icbo Max. @Vcb Max. (A)	5.0u
Polarity	PNP
@VCE (test) (V)	.50
Oper. Temp (°C) Max.	100
@Ic (A)	50m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.06 W
Maximum Collector-Base Voltage \|Vcb\|	15 V
Maximum Collector-Emitter Voltage \|Vce\|	15 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	100 °C
Collector Capacitance (Cc)	2.5 pF
Transition Frequency (ft):	350 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	776292

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