2N2176

SKU: 2N2176

2N2176 Transistor Silicon PNP CASE: TO18 MAKE: USA Make

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO18
Manufacturer	USA Make
Vbr CBO	6.0
Vbr CEO	6.0
Max. PD (W)	100m
C(ob) (F)	10p
Derate (Amb) (W/°C)	666u
hfe	50
Ic Max. (A)	50m
Icbo Max. @Vcb Max. (A)	1.0n
Polarity	PNP
Trans. Freq (Hz) Min.	10M
@VCE (test) (V)	1.5
Oper. Temp (°C) Max.	175
@Ic (A)	20u
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.1 W
Maximum Collector-Base Voltage \|Vcb\|	6 V
Maximum Collector-Emitter Voltage \|Vce\|	6 V
Maximum Collector Current \|Ic max\|	0.05 A
Max. Operating Junction Temperature (Tj)	160 °C
Collector Capacitance (Cc)	14 pF
Transition Frequency (ft):	10 MHz
Forward Current Transfer Ratio (hFE), MIN	15
SKU	776288

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