The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N2177
View detailed images (12)

2N2177

SKU: 2N2177
2N2177 Transistor Silicon PNP CASE: TO5 MAKE: USA Make
Product specifications
Type Transistor Silicon PNP
Case TO5
Manufacturer USA Make
Vbr CBO 6.0
Vbr CEO 6.0
Max. PD (W) 100m
C(ob) (F) 10p
Derate (Amb) (W/°C) 666u
hfe 50
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 1.0n
Polarity PNP
Trans. Freq (Hz) Min. 8.0M
@VCE (test) (V) 1.5
Oper. Temp (°C) Max. 175
@Ic (A) 20u
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.1 W
Maximum Collector-Base Voltage |Vcb| 6 V
Maximum Collector-Emitter Voltage |Vce| 6 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 160 °C
Collector Capacitance (Cc) 14 pF
Transition Frequency (ft): 8 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SKU 776287
Back