The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N2187
View detailed images (1)

2N2187

SKU: 2N2187
2N2187 Transistor Silicon PNP CASE: TO39A-1 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case TO39A-1
Manufacturer Generic
Vbr CBO 30
Vbr CEO 30
Max. PD (W) 150m
C(ob) (F) 9.0p
Derate (Amb) (W/°C) 1.3m
hfe 10
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 1.0n
Polarity PNP
@VCE (test) (V) .50
Oper. Temp (°C) Max. 150
@Ic (A) 5.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 140 °C
Collector Capacitance (Cc) 9 pF
Transition Frequency (ft): 6.5 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 776280
Back