2N2200

SKU: 2N2200

2N2200 Transistor Germanium PNP CASE: TO9 MAKE: USA Make

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO5
Manufacturer	USA Make
Vbr CBO	15
Vbr CEO	10
Max. PD (W)	75m
C(ob) (F)	2.8p
Derate (Amb) (W/°C)	1.0m
hfe	70=
Ic Max. (A)	100m
Icbo Max. @Vcb Max. (A)	5.0u
Polarity	PNP
Trans. Freq (Hz) Min.	120M
@VCE (test) (V)	10
Oper. Temp (°C) Max.	100
@Ic (A)	3.0m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.075 W
Maximum Collector-Base Voltage \|Vcb\|	15 V
Maximum Collector-Emitter Voltage \|Vce\|	10 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	100 °C
Collector Capacitance (Cc)	2.8 pF
Transition Frequency (ft):	120 MHz
Forward Current Transfer Ratio (hFE), MIN	9
SKU	776266

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