2N2212

SKU: 2N2212

2N2212 Transistor Germanium PNP CASE: TO3 MAKE: Generic

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO3
Manufacturer	Generic
Vbr CBO	120
Vbr CEO	120
Max. PD (W)	60
Max. hFE	120
Min hFE	50
Ic Max. (A)	10
@Ic (test) (A)	5.0
Icbo Max. @Vcb Max. (A)	2.0m
Polarity	PNP
R(sat) (Û)	200m
Derate Above 25°C	1.2
Trans. Freq (Hz) Min.	450k
Oper. Temp (°C) Max.	125
@VCE (V)	2.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	102 W
Maximum Collector-Base Voltage \|Vcb\|	120 V
Maximum Collector-Emitter Voltage \|Vce\|	120 V
Maximum Emitter-Base Voltage \|Veb\|	1 V
Maximum Collector Current \|Ic max\|	10 A
Max. Operating Junction Temperature (Tj)	100 °C
Transition Frequency (ft):	0.45 MHz
Forward Current Transfer Ratio (hFE), MIN	50
SKU	605933

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