2N2217A

2N2217A

SKU: 2N2217A
2N2217A Transistor Silicon NPN CASE: TO51 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO51
Manufacturer Generic
Vbr CBO 75
Vbr CEO 40
Max. PD (W) 800m
C(ob) (F) 4.0p
Derate (Amb) (W/°C) 5.6m
hfe 40
Icbo Max. @Vcb Max. (A) .01u
Polarity NPN
Trans. Freq (Hz) Min. 400M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 175
@Ic (A) 150m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.8 W
Maximum Collector-Base Voltage |Vcb| 75 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.8 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 8 pF
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 776258
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