2N2281

SKU: 2N2281

2N2281 Transistor Silicon PNP CASE: MB13 MAKE: USA Make

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	MB13
Manufacturer	USA Make
Vbr CBO	10
Vbr CEO	6.0
Max. PD (W)	150m
C(ob) (F)	10p
Derate (Amb) (W/°C)	1.3m
hfe	10
Ic Max. (A)	50m
Icbo Max. @Vcb Max. (A)	3.0n
Polarity	PNP
@VCE (test) (V)	.50
Oper. Temp (°C) Max.	150
@Ic (A)	5.0m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.15 W
Maximum Collector-Base Voltage \|Vcb\|	10 V
Maximum Collector-Emitter Voltage \|Vce\|	6 V
Maximum Emitter-Base Voltage \|Veb\|	10 V
Maximum Collector Current \|Ic max\|	0.05 A
Max. Operating Junction Temperature (Tj)	140 °C
Collector Capacitance (Cc)	10 pF
Transition Frequency (ft):	16 MHz
Forward Current Transfer Ratio (hFE), MIN	10
SKU	776113

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