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2N2291
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2N2291

SKU: 2N2291
2N2291 Transistor Germanium PNP CASE: TO3 MAKE: Generic
Product specifications
Type Transistor Germanium PNP
Case TO3
Manufacturer Generic
Vbr CBO 40
Vbr CEO 30
Max. PD (W) 60
Max. hFE 120
Min hFE 50
Ic Max. (A) 10
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 5.0m
Polarity PNP
R(sat) (Û) 200m
Derate Above 25°C 833m
Oper. Temp (°C) Max. 125#
@VCE (V) 2.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 70 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 1 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 110 °C
Transition Frequency (ft): 0.45 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SKU 776102
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