2N2296

SKU: 2N2296

2N2296 Transistor Germanium PNP CASE: TO3 MAKE: USA Make

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO3
Manufacturer	USA Make
Vbr CBO	120
Vbr CEO	70
Max. PD (W)	60
t(f) Max. (S)	10u+
Max. hFE	120
Min hFE	50
Ic Max. (A)	10
@Ic (test) (A)	5.0
Icbo Max. @Vcb Max. (A)	20m
Polarity	PNP
Tr Max. (s)	10u
R(sat) (Û)	200m
Derate Above 25°C	833m
Oper. Temp (°C) Max.	125#
@VCE (V)	2.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	60 W
Maximum Collector-Base Voltage \|Vcb\|	120 V
Maximum Collector-Emitter Voltage \|Vce\|	70 V
Maximum Emitter-Base Voltage \|Veb\|	1 V
Maximum Collector Current \|Ic max\|	10 A
Max. Operating Junction Temperature (Tj)	100 °C
Transition Frequency (ft):	0.45 MHz
Forward Current Transfer Ratio (hFE), MIN	50
SKU	368177

Back