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2N2358
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2N2358

SKU: 2N2358
2N2358 Transistor Germanium PNP CASE: TO3 MAKE: Generic
Product specifications
Type Transistor Germanium PNP
Case TO3
Manufacturer Generic
Vbr CBO 100
Vbr CEO 60
Max. PD (W) 170
t(f) Max. (S) 10u+
Max. hFE 90
Min hFE 30
Ic Max. (A) 50
@Ic (test) (A) 20
Icbo Max. @Vcb Max. (A) 50m
Polarity PNP
Tr Max. (s) 15u
R(sat) (Û) 18m
Derate Above 25°C 2.0
Oper. Temp (°C) Max. 125#
@VCE (V) 1.5
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 170 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 2 V
Maximum Collector Current |Ic max| 50 A
Max. Operating Junction Temperature (Tj) 110 °C
Transition Frequency (ft): 0.6 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 368187
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