2N2359

SKU: 2N2359

2N2359 Transistor Germanium PNP CASE: TO3 MAKE: Generic

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO3
Manufacturer	Generic
Vbr CBO	120
Vbr CEO	80
Max. PD (W)	170
t(f) Max. (S)	10u+
Max. hFE	90
Min hFE	30
Ic Max. (A)	50
@Ic (test) (A)	20
Icbo Max. @Vcb Max. (A)	50m
Polarity	PNP
Tr Max. (s)	15u
R(sat) (Û)	18m
Derate Above 25°C	2.0
Oper. Temp (°C) Max.	125#
@VCE (V)	1.5
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	170 W
Maximum Collector-Base Voltage \|Vcb\|	120 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Maximum Emitter-Base Voltage \|Veb\|	2 V
Maximum Collector Current \|Ic max\|	50 A
Max. Operating Junction Temperature (Tj)	100 °C
Transition Frequency (ft):	0.6 MHz
Forward Current Transfer Ratio (hFE), MIN	30
SKU	776015

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